Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures

Superlattices consisting of As monolayers ~MLs! in ~In,Ga,Al!Sb and Sb MLs in ~In,Ga,Al!As were grown by molecular beam epitaxy and characterized by x-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy. In all cases, well-defined superlattices were formed when the growth temperature was sufficiently low. As temperature increases for the As MLs in antimonid...

Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy.

Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2...

In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitrid...

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures.

The heterostructured configuration between two-dimensional (2D) semiconductor materials has enabled the engineering of the band gap and the design of novel devices. So far, the synthesis of single-component topological insulator (TI) 2D materials such as Bi2Se3, Bi2Te3, and Sb2Te3 has been achieved through vapor phase growth and molecular beam epitaxy; however, the spatial controlled fabricatio...